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Typical Characteristics
Top :
V GS
15.0 V
10.0 V
10
10
2
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
2
10
10
1
1
175 ℃
※ Notes :
1. 250 μ s Pulse Test
2. T C = 25 ℃
25 ℃
-55 ℃
※ Notes :
1. V DS = 30V
2. 250 μ s Pulse Test
10
10
10
10
10
0
-1
0
1
0
2
4
6
8
10
10
0.015
0.012
V DS , Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
V GS = 10V
2
V GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10
0.009
0.006
0.003
V GS = 20V
1
※ Note : T J = 25 ℃
175 ℃
25 ℃
※ Notes :
1. V GS = 0V
2. 250 μ s Pulse Test
0.000
10
0
50
100
150 200
I D , Drain Current [A]
250
300
350
0
0.2
0.4
0.6 0.8 1.0 1.2
V SD , Source-Drain voltage [V]
1.4
1.6
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
8000
C iss = C gs + C gd (C ds = shorted)
C oss = C ds + C gd
C rss = C gd
12
10
V DS = 30V
6000
4000
C oss
C iss
※ Notes :
1. V GS = 0 V
2. f = 1 MHz
8
6
V DS = 48V
4
2000
C rss
2
※ Note : I D = 85A
10
10
10
0
-1
0 1
V DS , Drain-Source Voltage [V]
0
0
20
40 60
Q G , Total Gate Charge [nC]
80
100
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
?2001 Fairchild Semiconductor Corporation
FQP85N06 Rev. C1
3
www.fairchildsemi.com